BUZ72L Datasheet, PDF (8/8 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

BUZ 72L
Avalanche energy E_AS = ƒ(T_j)
parameter: I_D = 10 A, V_DD = 25 V
R_GS = 25 Ω, L = 885 µH
60
mJ
50
E
AS
45
40
35
30
25
20
15
10
5
0
20 40 60 80 100 120 ˚C 160
T_j
Drain-source breakdown voltage
V_(BR)DSS = ƒ(T_j)
Typ. gate charge
V_GS = ƒ(Q_Gate)
parameter: I_{D puls} = 15 A
16
V
V
GS
12
10
8
0,2
V
DS
max
6
4
2
0
0
10
20
30
0,8
V
DS
max
40 nC 55
Q_Gate
120
V
116
V
114
(BR)DSS
112
110
108
106
104
102
100
98
96
94
92
90
-60
-20
20
60
100 ˚C 160
T_j
Data Sheet
8
05.99