BUZ31L Datasheet, PDF (8/8 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

BUZ 31L
Avalanche energy E_AS = ƒ(T_j)
parameter: I_D = 13.5 A, V_DD = 50 V
R_GS = 25 ^Ω, L = 1.65 mH
220
mJ
180
E_AS
160
140
120
100
80
60
40
20
0
20 40 60 80 100 120 ˚C 160
T_j
Drain-source breakdown voltage
V_(BR)DSS = ^ƒ(T_j)
Typ. gate charge
V_GS = ^ƒ(Q_Gate)
parameter: I_{D puls} = 21 A
16
V
V_GS
12
10
8
0,2 V_{DS max}
6
0,8 V_{DS max}
4
2
0
0 20 40 60 80 100 120 nC 150
Q_Gate
240
V
230
V_(BR)DSS
225
220
215
210
205
200
195
190
185
180
-60
-20
20
60
100 ˚C 160
T_j
Data Sheet
8
05.99