BTS410F2 Datasheet, PDF (8/15 Pages) Siemens Semiconductor Group – Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)

GND disconnect with GND pull up
IN
2
ST
4
3
Vbb
PROFET
GND
1
OUT
5
Vbb
VIN VST
VGND
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Vbb disconnect with energized inductive
load
3
high
IN
Vbb
2
ST
4
PROFET
GND
OUT
5
1
Vbb
Normal load current can be handled by the PROFET
itself.
Vbb disconnect with charged external
inductive load
S
3
high
IN
Vbb
2
PROFET
OUT
5
D
ST
4
GND
1
Vbb
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
BTS 410 F2
Inductive Load switch-off energy
dissipation
E _bb
IN
Vbb
E _AS
ELoad
PROFET ^OUT
=
ST
EL
GND
L
{Z _{L RL}
ER
Energy stored in load inductance:
E_L = ^1/2·L·I^2L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E_AS= E_bb + E_L - E_R= V_ON(CL)·i_L(t) dt,
with an approximate solution for R_L > 0 Ω:
E_AS=
2I^L·R^{· L}_L^·(Vbb
+
|V_OUT(CL)|)·
ln
(1+
I_L·R_L
|V_OUT(CL)|
)
Maximum allowable load inductance for
a single switch off
L = f (I_L ); T_j,start = 150°C,T_C = 150°C const.,
V_bb = 12 V, R_L = 0 Ω
L [mH]
10000
1000
Semiconductor Group
100
1.5 1.75 2 2.25 2.5 2.75 3
I_L [A]
8
2003-Oct-01