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| BSC0906NS Datasheet, PDF (8/12 Pages) Infineon Technologies AG – n-Channel Power MOSFET | |||
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Table 12
9 Drain-source on-state resistance
OptiMOS⢠Power-MOSFET
BSC0906NS
Electrical characteristics diagrams
10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=30 A; VGS=10 V
Table 13
11 Typ. capacitances
VGS(th)=f(Tj); VGS=VDS; ID=250 µA
12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz
Final Data Sheet
IF=f(VSD); parameter: Tj
7
2.0, 2011-06-10
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