BSC0501NSI_15 Datasheet, PDF (8/13 Pages) Infineon Technologies AG – Metal Oxide Semiconductor Field Effect Transistor

OptiMOS^TM5Power-MOSFET,30V
BSC0501NSI
Diagram5:Typ.outputcharacteristics
500
10 V
5V
4V
400
4.5 V
300
3.5 V
200
3.2 V
3V
100
2.8 V
Diagram6:Typ.drain-sourceonresistance
4
3 _{3.2 V}
3.5 V
4V
2
4.5 V
5V
7V
8V
1
10 V
0
0
1
2
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
0
3
0
10
20
30
40
50
ID[A]
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
400
Diagram8:Typ.forwardtransconductance
500
320
400
240
300
160
200
80
150 °C
25 °C
0
0
1
2
3
4
VGS[V]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
100
0
5
0
50
gfs=f(ID);Tj=25°C
100
150
200
250
ID[A]
Final Data Sheet
8
Rev.2.0,2015-07-13