BSC010N04LS_14 Datasheet, PDF (8/14 Pages) Infineon Technologies AG – Metal Oxide Semiconductor Field Effect Transistor

Diagram5:Typ.outputcharacteristics
400
4.5 V
4V
350
5 V _{3.5 V}
300 ^{10 V}
3.2 V
250
3V
200
2.8 V
150
100
50
0
0
1
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
OptiMOS^TMPower-MOSFET,40V
BSC010N04LS
Diagram6:Typ.drain-sourceonresistance
1.5
3.2 V
3.5 V
4V
1.0
4.5 V
5V
10 V
7V
8V
0.5
0.0
2
0
20
40
60
ID[A]
RDS(on)=f(ID);Tj=25°C;parameter:VGS
80
100
Diagram7:Typ.transfercharacteristics
400
Diagram8:Typ.forwardtransconductance
400
320
320
240
240
160
160
150 °C
25 °C
80
80
0
0
1
2
3
4
VGS[V]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
0
5
0
20
gfs=f(ID);Tj=25°C
40
60
ID[A]
80
100
Final Data Sheet
8
Rev.2.2,2014-06-27