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| BSB150N15NZ3 Datasheet, PDF (8/13 Pages) Infineon Technologies AG – n-Channel Power MOSFET | |||
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Table 12
9 Drain-source on-state resistance
OptiMOS⢠Power-MOSFET
BSB150N15NZ3 G
Electrical characteristics diagrams
10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=30 A; VGS=10 V
Table 13
11 Typ. capacitances
VGS(th)=f(Tj); VGS=VDS;
12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz
Final Data Sheet
IF=f(VSD); parameter: Tj
7
2.3, 2011-03-01
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