BFP843F Datasheet, PDF (8/26 Pages) Infineon Technologies AG – Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor

2
Features
• Low noise broadband NPN RF transistor based on Infineon´s
reliable, high volume SiGe:C bipolar technology
• High maximum RF input power and ESD robustness
20 dBm maximum RF input power, 1.5 KV HBM ESD hardness
• Unique combination of high RF performance, robustness and
ease of application circuit design
• Low noise figure: NF_min = 0.95 dB at 2.4 GHz
and 1.1 dB at 5.5 GHz, 1.8 V, 8 mA
• High gain |S₂₁|² = 21.5 dB at 2.4 GHz
and 16.5 dB at 5.5 GHz, 1.8 V, 15 mA
• OIP₃ = 22.5 dBm at 2.4 GHz and 20 dBm at 5.5 GHz, 1.8 V, 15 mA
• Ideal for low voltage applications e.g. V_CC = 1.2 V and 1.8 V
(2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor)
• Low power consumption, ideal for mobile applications
• Thin small flat Pb-free (RoHS compliant) and halogen-free
package with visible leads
• Qualification report according to AEC-Q101 available
BFP843F
Features
Applications
As Low Noise Amplifier (LNA) in
• Wireless Communications: WLAN IEEE802.11b,g,n,a,ac single- and dual band applications, broadband LTE
or WiMAX LNA
• Satellite navigation systems (e.g. GPS, GLONASS, COMPASS...) and satellite C-band LNB (1st and 2nd stage
LNA)
• Broadband amplifiers: Dualband WLAN, multiband mobile phone, UWB up to 10 GHz
• ISM bands up to 10 GHz
• Dedicated short range communication (DSRC) systems: WLAN IEEE802.11p
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
BFP843F
Package
TSFP-4-1
1=B
Pin Configuration
2=E
3=C
4=E
Marking
T2s
Data Sheet
8
Revision 1.0, 2013-06-19