SPW47N60C3 Datasheet, PDF (7/13 Pages) Infineon Technologies AG – Cool MOS Power Transistor

9 Typ. gate charge
V_GS = f (Q_Gate)
parameter: I_D = 47 A pulsed
SPW47N60C3
16
V
12
0.2 V_{DS max}
10 _{0.8 VDS max}
8
6
4
2
0
0 40 80 120 160 200 240 280 320 nC 400
Q_Gate
11 Typ. drain current slope
di/dt = f(R_G), inductive load, T_j = 125°C
par.: V_DS=380V, V_GS=0/+13V, I_D=47A
6000
A/µs
SPW47N60C3
10 Forward characteristics of body diode
I_F = f (V_SD)
parameter: T_j , tp = 10 µs
10 ^{3 SPW47N60C3}
A
10 ²
10 ¹
10 ⁰
0
T_j = 25 °C typ
T_j = 150 °C typ
T_j = 25 °C (98%)
T_j = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
V_SD
12 Typ. switching time
t = f (R_G), inductive load, T_j=125°C
par.: V_DS=380V, V_GS=0/+13V, I_D=47 A
10 ³
td(off)
ns
4000
3000
2000
di/dt(on)
10 ²
tf
td(on)
tr
10 ¹
1000
di/dt(off)
0
0 2 4 6 8 10 12 14 16 _Ω 20
R_G
Page 7
10 ⁰
0 2 4 6 8 10 12 14 16 _Ω 20
R_G
2003-11-06