SPW16N50C3 Datasheet, PDF (7/11 Pages) Infineon Technologies AG – Cool MOS Power Transistor

Final data
SPW16N50C3
9 Typ. gate charge
V_GS = f (Q_Gate)
parameter: I_D = 16 A pulsed
SPW16N50C3
16
V
10 Forward characteristics of body diode
I_F = f (V_SD)
parameter: T_j , tp = 10 µs
10 ^{2 SPW16N50C3}
A
12
10 ^{0.2 VDS max}
0.8 V_{DS max}
8
6
4
2
0
0 10 20 30 40 50 60 70 80 nC 100
Q_Gate
11 Avalanche SOA
I_AR = f (t_AR)
par.: T_j ≤ 150 °C
16
A
12
10 ¹
10 ⁰
10 ^-1
0
T_j = 25 °C typ
T_j = 150 °C typ
T_j = 25 °C (98%)
T_j = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
V_SD
12 Avalanche energy
E_AS = f (T_j)
par.: I_D = 8 , V_DD = 50 V
0.5
mJ
10
T_j(start) = 25°C
8
6
T_{j(start) = 125°C}
4
2
0
10
-3
10 ^-2
10 ^-1
10 ⁰
10 ¹
10 ²
µs ^{10 4}
t_AR
Page 7
0.3
0.2
0.1
0
20 40 60 80 100 120 _°C 160
T_j
2003-06-30