SPP20N65C3 Datasheet, PDF (7/14 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

9 Drain-source on-state resistance
R_DS(on) = f (T_j)
parameter : I_D = 13.1 A, V_GS = 10 V
SPP20N65C3
1.1
Ω
0.9
0.8
0.7
0.6
0.5
0.4
0.3
98%
0.2
typ
0.1
0
-60 -20 20
60 100
11 Typ. gate charge
V_GS = f (Q_Gate)
parameter: I_D = 20.7 A pulsed
SPP20N65C3
16
V
°C
180
T_j
SPP20N65C3, SPA20N65C3
SPI20N65C3
10 Typ. transfer characteristics
I_D= f ( V_GS ); V_DS≥ 2 x I_D x R_DS(on)max
parameter: t_p = 10 µs
80
A
25°C
60
50
40
150°C
30
20
10
0
0 1 2 3 4 5 6 7_V 9
V_GS
12 Forward characteristics of body diode
I_F = f (V_SD)
parameter: T_j , tp = 10 µs
10 ^{2 SPP20N65C3}
A
12
0,2 V_{DS max}
10
0,8 V_{DS max}
8
10 ¹
6
4
2
0
0
20 40 60 80 100 _nC 140
Q_Gate
10 ⁰
10 ^-1
0
T_j = 25 °C typ
T_j = 150 °C typ
T_j = 25 °C (98%)
T_j = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
V_SD
Page 7
2003-08-15