SPP15P06P Datasheet, PDF (7/8 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

13 Typ. avalanche energy
E_AS = f (T_j); par.: I_D = -15 A ,
V_DD = -25 V, R_GS = 25 Ω
250
mJ
200
175
150
125
100
75
50
25
0
25
50
75 100 125 °C
175
T_j
15 Drain-source breakdown voltage
V_(BR)DSS = f (T_j)
SPP15P10P
14 Typ. gate charge
V_GS = f (Q_Gate)
parameter: I_D = -15 A pulsed, T_j = 25°C
SPP15P10P
-16
V
-12
20%
-10 _50%
80%
-8
-6
-4
-2
0
0
10
20
30
40 nC 55
|Q_G|
SPP15P10P
-120
V
-114
-112
-110
-108
-106
-104
-102
-100
-98
-96
-94
-92
-90
-60 -20 20 60 100 140 °C 200
T_j
Rev 1.2
Page 7
2005-02-11