SPP11N80C3_05 Datasheet, PDF (7/13 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

9 Typ. drain-source on resistance
R_DS(on)=f(I_D)
parameter: T_j=150°C, V_GS
3
Ω
4V
2.6
4.5V
2.4
5V
2.2
5.5V
2
1.8
6V
1.6
6.5V
1.4
1.2
20V
1
0.8
0 2 4 6 8 10 12 14 _A 18
I_D
11 Typ. transfer characteristics
I_D= f ( V_GS ); V_DS≥ 2 x I_D x R_DS(on)max
parameter: t_p = 10 µs
35
A
25°C
SPP11N80C3
SPA11N80C3
10 Drain-source on-state resistance
R_DS(on) = f (T_j)
parameter : I_D = 7.1 A, V_GS = 10 V
2.6 ^SPP11N80C3
Ω
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
98%
0.4
typ
0.2
0
-60 -20
20
60 100
12 Typ. gate charge
V_GS = f (Q_Gate)
parameter: I_D = 11 A pulsed
SPP11N80C3
16
V
°C
180
T_j
12
25
10
20
8
15
150°C
6
10
4
5
2
0
0
0 2 4 6 8 10 12 14 16 _V 20
0
V_GS
Rev. 2.4
Page 7
0,2 V_{DS max}
0,8 V_{DS max}
20
40
60
80 _nC 110
Q_Gate
2005-08-24