SBH52414G-FSAN Datasheet, PDF (7/12 Pages) Infineon Technologies AG – High Power BIDI Optical Standard Module 1310 nm Emitting, 1550 nm Receiving

SBH52414x-FSAN
Technical Data
The electro-optical characteristics described in the following tables are only valid for use
within the specified maximum ratings or under the recommended operating conditions.
Transmitter Electro-Optical Characteristics
Parameter
Symbol
min.
Optical output power
(maximum)
P_{F, max}
2
Emission wavelength center of
range, P_F = 0.5 P_{F, max.}
Spectral width (RMS)
Temperature coefficient of
wavelength
l_trans
s_l
TC
1260
Threshold current
I_th
2
(whole temperature range)
Forward voltage, P_F = 0.5 P_{F, max.} V_F
Radiant power at I_th
P_th
Slope efficiency (–40...85°C) h
35
Variation of 1st derivative of P/I S_var
–30
(0.1 to 2.0 mW)
Differential series resistance R_S
Rise time (10%–90%)
t_r
Fall time (10%–90%)
t_f
Limit Values
typ.
max.
1360
5.8
0.5
45
1.5
50
150
30
8
100
200
270
500
Unit
mW
nm
nm/K
mA
V
µW
mW/A
%
W
ps
Monitor Diode Electro-Optical Characteristics
Parameter
Symbol
Limit Values Unit
min.
max.
Dark current, V_R = 5 V, P_F = 0, T = T_max
I_R
Photocurrent, V_R = 5 V, P_F = 0.5 P_{F, max}
I_P
Capacitance, V_R = 5 V, f = 1 MHz
C₅
Tracking error¹⁾, V_R = 5 V
TE
500
nA
100
1000
µA
10
pF
–1
1
dB
1) _{The tracking error TE is the maximum deviation of PF at constant current Imon over a specified temperature}
range and relative to the reference point: I_{mon, ref} = I_mon (T = 25°C, P_F = 0.5 P_{F, max.}). Thus, TE is given by:
TE[dB] = 10 ™ log ----^P----^F---^[--^T----^C---^]----
P_F [ 25°C ]
Data Sheet
7
2002-05-28