IPP100N06S3-03 Datasheet, PDF (7/8 Pages) Infineon Technologies AG – OptiMOS®-T Power-Transistor

13 Typical avalanche energy
E _AS = f(T _j)
parameter: I _D
1400
1200
30 A
1000
40 A
800
50 A
600
IPB100N06S3-03
IPI100N06S3-03, IPP100N06S3-03
14 Typ. drain-source breakdown voltage
V _BR(DSS) = f(T _j); I _D = 1 mA
66
64
62
60
58
56
54
400
52
50
200
48
0
46
0
50
100
150
200
-60 -20
20
60 100 140 180
T _j [°C]
T _j [°C]
15 Typ. gate charge
V _GS = f(Q _gate); I _D = 80 A pulsed
parameter: V _DD
12
16 Gate charge waveforms
11 V
44 V
V _GS
10
Q_g
8
6
4
2
Q _gs
0
0
100
200
300
400
500
Q _gate [nC]
Rev. 1.0
page 7
Q _gd
Q gate
2005-09-16