 English |
|
|
|
|
|
|
|
| IPP023N10N5 Datasheet, PDF (7/12 Pages) Infineon Technologies AG – N-channel, normal level | |||
| |||
| ◁ |
5Electricalcharacteristicsdiagrams
OptiMOSª5Power-Transistor,100V
IPP023N10N5
Diagram1:Powerdissipation
400
Diagram2:Draincurrent
140
120
300
100
80
200
60
40
100
20
0
0
Ptot=f(TC)
50
100
150
TC[°C]
0
200
0
50
100
150
200
TC[°C]
ID=f(TC);VGSâ¥10V
Diagram3:Safeoperatingarea
103
1 µs
10 µs
102
10 ms
100 µs
1 ms
101
DC
100
10-1
10-1
100
101
102
VDS[V]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
Diagram4:Max.transientthermalimpedance
100
0.5
10-1
0.2
0.1
0.05
0.02
0.01 single pulse
10-2
103
10-5
10-4
10-3
10-2
10-1
100
tp[s]
ZthJC=f(tp);parameter:D=tp/T
7
Rev.2.1,2014-05-05
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese