IPI47N10SL-26 Datasheet, PDF (7/8 Pages) Infineon Technologies AG – SIPMOS Power-Transistor N-Channel Enhancement mode Logic Level

13 Typ. avalanche energy
E_AS = f (T_j)

par.: I_D = 47 A , V_DD = 25 V, R_GS = 25
400
mJ
320
280
240
200
160
120
80
40
025 _{45 65 85 105 125 145 °C 185}
T_j
15 Drain-source breakdown voltage
V_(BR)DSS = f (T_j)
SPP47N10L
120
V
IPI47N10SL-26
IPP47N10SL-26, IPB47N10SL-26
14 Typ. gate charge
V_GS = f (Q_Gate)
parameter: I_D = 47 A pulsed
16 ^SPP47N10L
V
12
10
0,2 V_{DS max}
0,8 V_{DS max}
8
6
4
2
00
20 40 60 80 100 120 _nC 150
Q_Gate
114
112
110
108
106
104
102
100
98
96
94
92
90-60 _-20
20
60 100 140 °C 200
T_j
Page 7
2006-02-14