IPG20N06S4L-11A_15 Datasheet, PDF (7/9 Pages) Infineon Technologies AG – Dual N-channel Logic Level - Enhancement mode

IPG20N06S4L-11A
13 Avalanche energy⁴⁾
E _AS = f(T _j), I _D = 10A
14 Drain-source breakdown voltage
V _BR(DSS) = f(T _j); I _D = 1 mA
175
65
150
63
125
61
100
75
59
50
57
25
0
25
50
75 100 125 150 175
T_j [°C]
55
-60 -20
20
60 100 140 180
T_j [°C]
15 Typ. gate charge⁴⁾
V _GS = f(Q _gate); I _D = 20 A pulsed
parameter: V _DD
16 Gate charge waveforms
12
V _GS
Q_g
10
12V
48 V
8
6
V _{g s(th)}
4
2
0
0
Rev. 1.0
10
20
30
40
50
Q_gate [nC]
Q _{g (th)}
Q _gs
page 7
Q _sw
Q _gd
Q _gate
2015-05-04