IPD90N03S4L-03 Datasheet, PDF (7/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor

IPD90N03S4L-03
13 Typical avalanche energy
E _AS = f(T _j)
parameter: I _D
400
350
300 ^{22.5 A}
250
200
150 45 A
100
90 A
50
0
25
75
125
T _j [°C]
15 Typ. gate charge
V _GS = f(Q _gate); I _D = 90 A pulsed
parameter: V _DD
10
6V
9
24 V
8
7
6
5
4
3
2
1
0
0
20
40
60
Q _gate [nC]
Rev. 2.0
14 Typ. drain-source breakdown voltage
V _BR(DSS) = f(T _j); I _D = 1 mA
34
33
32
31
30
29
28
175
-55 -15
25
65 105 145
T _j [°C]
16 Gate charge waveforms
V _GS
Q_g
V _{g s(th)}
Q _{g (th)}
Q _gs
80
page 7
Q _sw
Q _gd
Q _gate
2007-01-31