IPD26N06S2L-35 Datasheet, PDF (7/8 Pages) Infineon Technologies AG – OptiMOS Power-Transistor

IPD26N06S2L-35
13 Typical avalanche energy
E _AS = f(T _j)
parameter: I _D
350
14 Typ. gate charge
V _GS = f(Q _gate); I _D = 26 A pulsed
12
300
250
6.5 A
200
150
13 A
100
26 A
50
10
11 V
8
6
4
2
0
0
25
50
75 100 125 150 175
0
T _j [°C]
10
Q _gate [nC]
15 Typ. drain-source breakdown voltage
V _BR(DSS) = f(T _j); I _D = 1 mA
16 Gate charge waveforms
44 V
20
66
64
62
60
58
56
54
52
50
-60 -20 20
60 100 140 180
T _j [°C]
V _GS
Q _gs
Rev. 1.0
page 7
Q_g
Q _gd
Q gate
2006-07-18