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IPD200N15N3G_15 Datasheet, PDF (7/12 Pages) Infineon Technologies AG – N-channel, normal level
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13 Avalanche characteristics
I AS=f(t AV); R GS=25 W
parameter: T j(start)
100
25 °C
100 °C
125 °C
10
IPB200N15N3 G IPD200N15N3 G
IPI200N15N3 G IPP200N15N3 G
14 Typ. gate charge
V GS=f(Q gate); I D=50A pulsed
parameter: V DD
10
120 V
8
75 V
30 V
6
4
2
1
0
1
10
100
1000
0
10
20
30
tAV [µs]
Qgate [nC]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=1 mA
16 Gate charge waveforms
170
V GS
165
160
155
150
V gs(th)
145
140
135
-60 -20
20
60 100 140 180
Tj [°C]
Q g(th)
Q gs
Rev. 2.07
page 7
Qg
Q sw
Q gd
Q gate
2014-01-09
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