IPB80N04S3-06 Datasheet, PDF (7/9 Pages) Infineon Technologies AG – OptiMOS-T Power-Transistor

13 Typical avalanche energy
E _AS = f(T _j)
parameter: I _D
600
IPB80N04S3-06
IPI80N04S3-06, IPP80N04S3-06
14 Typ. drain-source breakdown voltage
V _BR(DSS) = f(T _j); I _D = 1 mA
55
500
50
20 A
400
45
300
40
200
40 A
35
100
80 A
0
25
75
125
T _j [°C]
15 Typ. gate charge
V _GS = f(Q _gate); I _D = 80 A pulsed
parameter: V _DD
12
8V
10
30
175
-60 -20
20
60 100 140 180
T _j [°C]
16 Gate charge waveforms
V _GS
32 V
Q_g
8
6
V _{g s(th)}
4
2
0
0
Rev. 1.1
10
20
30
Q _gate [nC]
Q _{g (th)}
Q _gs
40
page 7
Q _sw
Q _gd
Q _gate
2007-05-03