IPB25N06S3-25_07 Datasheet, PDF (7/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor

13 Typical avalanche energy
E _AS = f(T _j)
parameter: I _D
300
250 ^{6.25 A}
200
150
12.5 A
100
50 ^{25 A}
0
0
50
100
150
T _j [°C]
15 Typ. gate charge
V _GS = f(Q _gate); I _D = 25 A pulsed
parameter: V _DD
12
11 V
44 V
10
8
IPB25N06S3-25
IPI25N06S3-25, IPP25N06S3-25
14 Typ. drain-source breakdown voltage
V _BR(DSS) = f(T _j); I _D = 1 mA
66
64
62
60
58
56
54
52
50
48
46
200
-60 -20
20
60 100 140 180
T _j [°C]
16 Gate charge waveforms
V _GS
Q_g
6
4
2
Q _gs
0
0
10
20
30
40
50
Q _gate [nC]
Rev. 1.1
page 7
Q _gd
Q gate
2007-11-07