IPB200N15N3 Datasheet, PDF (7/12 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

13 Avalanche characteristics
I _AS=f(t _AV); R _GS=25 Ω
parameter: T _j(start)
100
25 °C
100 °C
125 °C
10
IPB200N15N3 G IPD200N15N3 G
IPI200N15N3 G IPP200N15N3 G
14 Typ. gate charge
V _GS=f(Q _gate); I _D=50A pulsed
parameter: V _DD
10
120 V
8
75 V
30 V
6
4
2
1
1
10
100
t _AV [µs]
15 Drain-source breakdown voltage
V _BR(DSS)=f(T _j); I _D=1 mA
0
1000
0
10
20
Q _gate [nC]
16 Gate charge waveforms
170
V _GS
165
160
155
150
V _{g s(th)}
145
140
Q _g(th)
135
-60 -20
20
60 100 140 180
T _j [°C]
Q _gs
Rev. 2.05
page 7
Q_g
Q _sw
Q _gd
30
Q _gate
2010-04-28