IPB120N06S4-03 Datasheet, PDF (7/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor

13 Avalanche energy
E _AS = f(T _j); ; I _D = 60 A
IPB120N06S4-03
IPI120N06S4-03, IPP120N06S4-03
14 Drain-source breakdown voltage
V _BR(DSS) = f(T _j); I _D = 1 mA
300
66
250
64
200
62
150
60
100
58
50
0
56
25
75
125
175
-55 -15
25
65 105 145
T _j [°C]
T _j [°C]
15 Typ. gate charge
V _GS = f(Q _gate); I _D = 120 A pulsed
parameter: V _DD
10
9
12 V
8
16 Gate charge waveforms
V _GS
48 V
Q_g
7
6
5
4
V _{g s(th)}
3
2
1
0
0 20 40 60 80 100 120 140
Q _gate [nC]
Q _{g (th)}
Q _gs
Q _sw
Q _gd
Q _gate
Rev. 1.0
page 7
2009-03-23