IPB100N06S3L-04 Datasheet, PDF (7/8 Pages) Infineon Technologies AG – OptiMOS-T Power-Transistor

13 Typical avalanche energy
E _AS = f(T _j)
parameter: I _D
1000
900 ^{25 A}
800
700
600
500 50 A
400
300
100 A
200
100
0
0
50
100
150
T _j [°C]
IPB100N06S3L-04
IPI100N06S3L-04, IPP100N06S3L-04
14 Drain-source breakdown voltage
V _BR(DSS) = f(T _j); I _D = 1 mA
66
64
62
60
58
56
54
52
50
48
46
200
-60 -20
20
60 100 140 180
T _j [°C]
15 Typ. gate charge
V _GS = f(Q _gate); I _D = 80 A pulsed
parameter: V _DD
12
16 Gate charge waveforms
11 V
44 V
V GS
10
Q_g
8
6
4
2
Q _gs
0
0 50 100 150 200 250 300 350
Q _gate [nC]
Rev. 1.0
page 7
Q _gd
Q gate
2006-03-14