IPB06N03LAG Datasheet, PDF (7/9 Pages) Infineon Technologies AG – OptiMOS®2 Power-Transistor

13 Avalanche characteristics
I _AS=f(t _AV); R _GS=25 Ω
parameter: T_j(start)
100
150 °C
100 °C
14 Typ. gate charge
V _GS=f(Q _gate); I _D=25 A pulsed
parameter: V _DD
12
IPB06N03LA G
25 °C
10
8
15 V
5V
20 V
10
6
4
2
1
1
10
100
t _AV [µs]
15 Drain-source breakdown voltage
V _BR(DSS)=f(T _j); I _D=1 mA
0
1000
0
10
20
30
40
Q _gate [nC]
16 Gate charge waveforms
Rev. 1.6
29
V _GS
28
27
26
25
24
V _{g s(th)}
23
22
21
20
-60
-20
20
60 100 140 180
T _j [°C]
Q _g(th)
Q _gs
page 7
Q_g
Q _sw
Q _gd
Q _gate
2006-05-10