IPA65R190E6 Datasheet, PDF (7/19 Pages) Infineon Technologies AG – 650V CoolMOS™ E6 Power Transistor

650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Electrical characteristics
Table 8 Gate charge characteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q_gs
Q_gd
Q_g
V_plateau
Min.
-
-
-
-
Table 9 Reverse diode characteristics
Parameter
Symbol
Diode forward voltage
V_SD
Min.
-
Reverse recovery time
t_rr
-
Reverse recovery charge
Q_rr
-
Peak reverse recovery current
I_rrm
-
Values
Typ.
8.9
38
73
5.5
Max.
-
-
-
-
Values
Typ.
0.9
Max.
-
410
-
6.1
-
28
-
Unit
nC
Note /
Test Condition
V_DD=480 V, I_D=11 A,
V_GS=0 to 10 V
V
Unit
V
ns
µC
A
Note /
Test Condition
V_GS=0 V, I_F=11 A,
T_j=25 °C
V_R=400 V, I_F=11 A,
di_F/dt=100 A/µs
Final Data Sheet
7
Rev. 2.0, 2011-05-13