IKW75N60T Datasheet, PDF (7/13 Pages) Infineon Technologies AG – Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

TrenchStop Series
IKW75N60T
q
*) E_on and E_ts include losses
due to diode recovery
12.0mJ
E_ts*
*) E_on and E_ts include losses
due to diode recovery
8.0m J
E _ts*
8.0mJ
4.0mJ
6.0m J
E_on*
4.0m J
E_off
2.0m J
E _on*
E _off
0.0mJ
0A 20A 40A 60A 80A 100A 120A 140A
I_C, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T_J = 175°C,
V_CE = 400V, V_GE = 0/15V, R_G = 5Ω,
Dynamic test circuit in Figure E)
0.0m J
0Ω
5Ω
10Ω
15Ω
R_G, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T_J = 175°C,
V_CE = 400V, V_GE = 0/15V, I_C = 75A,
Dynamic test circuit in Figure E)
5.0mJ
*) E_on and E_ts include losses
due to diode recovery
4.0mJ
3.0mJ _Eoff
2.0mJ
E_on*
1.0mJ
*) E_on and E_ts include losses
E_ts*
due to diode recovery
8mJ
6mJ
E_ts*
4mJ
2mJ
E_on*
E _off
0.0mJ
25°C 50°C 75°C 100°C 125°C 150°C
T_J, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, V_CE = 400V,
V_GE = 0/15V, I_C = 75A, R_G = 5Ω,
Dynamic test circuit in Figure E)
0mJ
300V 350V 400V 450V 500V 550V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, T_J = 175°C,
V_GE = 0/15V, I_C = 75A, R_G = 5Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 2.4 May 06