IKB10N60T_15 Datasheet, PDF (7/13 Pages) Infineon Technologies AG – IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

IKB10N60T
TRENCHSTOP™ Series
p
1 ,0 m J
*) E_on and E_tsinclude losses
due to diode recovery
*) E_on and E_ts include losses
due to diode recovery
E_ts*
0,8 mJ
E_ts*
0 ,8 m J
0 ,6 m J
0 ,4 m J
0 ,2 m J
E _off
0,6 mJ
0,4 mJ
E_on*
0,2 mJ
E _off
E_on*
0 ,0 m J
0A
5A
10A
15A
I_C, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T_J = 175°C,
V_CE = 400V, V_GE = 0/15V, r_G = 23Ω,
Dynamic test circuit in Figure E)
0,0 mJ





R_G, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T_J = 175°C,
V_CE = 400V, V_GE = 0/15V, I_C = 10A,
Dynamic test circuit in Figure E)
0 ,6 m J
*) E_on and E_ts include losses
due to diode recovery
0 ,5 m J
E_ts*
0 ,4 m J
0,3mJ ^Eoff
0 ,2 m J
E_on*
0 ,1 m J
0 ,0 m J
50°C
100°C
150°C
T_J, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, V_CE = 400V,
V_GE = 0/15V, I_C = 10A, r_G = 23Ω,
Dynamic test circuit in Figure E)
0 ,8 m J
*) E_on and E_ts include losses
due to diode recovery
0 ,6 m J
E_ts*
0 ,4 m J
E _off
0 ,2 m J
E_on*
0 ,0 m J
300V 350V 400V 450V 500V 550V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, T_J = 175°C,
V_GE = 0/15V, I_C = 10A, r_G = 23Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
7
Rev. 2.6 11.05.2015