IGP06N60T Datasheet, PDF (7/12 Pages) Infineon Technologies AG – Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

TrenchStop^® Series
IGP06N60T
q
0,6 mJ
*) E_on and E_ts include losses
due to diode recovery
0,5 mJ
E_ts*
0,4 mJ
0,3 mJ
0,2 mJ
0,1 mJ
E_off
E_on*
0,0 mJ _{0A 2A 4A 6A 8A 10A}
I_C, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T_J=175°C,
V_CE=400V, V_GE=0/15V, R_G=23Ω,
Dynamic test circuit in Figure E)
*) E_on and E_ts include losses
due to diode recovery
E_ts*
0,4 mJ
0,3 mJ
E_on*
0,2 mJ
E_off
0,1 mJ
0,0 mJ
10Ω
30Ω
55Ω
80Ω
R_G, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T_J=175°C,
V_CE = 400V, V_GE = 0/15V, I_C = 6A,
Dynamic test circuit in Figure E)
0,4mJ
*) E_on and E_ts include losses
due to diode recovery
0,3mJ
E_ts*
0,2mJ
E _off
0,1mJ
E _on*
0,0mJ
50°C
100°C
150°C
T_J, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, V_CE=400V,
V_GE = 0/15V, I_C = 6A, R_G = 23Ω,
Dynamic test circuit in Figure E)
0 ,5m J
*) E_on and E_ts include losses
due to diode recovery
E _ts*
0 ,4m J
0 ,3m J
0 ,2m J
0 ,1m J
E _off
E_on*
0 ,0m J
200V
300V
400V
500V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, T_J = 175°C,
V_GE = 0/15V, I_C = 6A, R_G = 23Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 2.1 June 06