IGP03N120H2_08 Datasheet, PDF (7/13 Pages) Infineon Technologies AG – HighSpeed 2-Technology

IGP03N120H2
IGW03N120H2
1.0mJ
1_{) Eon and Ets include losses}
due to diode recovery.
E1
ts
0.5mJ
E
off
E1
on
0.0mJ
0A
2A
4A
I_C, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T_j = 150°C,
V_CE = 800V, V_GE = +15V/0V, R_G = 82Ω,
dynamic test circuit in Fig.E )
1_{) Eon and Ets include losses}
0.7mJ _{due to diode recovery.}
E1
ts
0.6mJ
0.5mJ
0.4mJ
0.3mJ E
off
0.2mJ
E1
on
0Ω 50Ω 100Ω 150Ω 200Ω 250Ω
R_G, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T_j = 150°C,
V_CE = 800V, V_GE = +15V/0V, I_C = 3A,
dynamic test circuit in Fig.E )
0.5mJ
1_{) Eon and Ets include losses}
E¹
due to diode recovery.
ts
0.4mJ
0.3mJ
0.2mJ
E
off
E1
on
0.1mJ
25°C
80°C
125°C 150°C
T_j, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V_CE = 800V,
V_GE = +15V/0V, I_C = 3A, R_G = 82Ω,
dynamic test circuit in Fig.E )
0.16mJ
I =3A, T =150°C
C
J
0.12mJ
0.08mJ
I =1A, T =150°C
C
J
I =3A, T =25°C
C
J
0.04mJ
0.00mJ
0V/us
I =1A, T =25°C
C
J
1000V/us 2000V/us 3000V/us
dv/dt, VOLTAGE SLOPE
Figure 16. Typical turn off switching energy
loss for soft switching
(dynamic test circuit in Fig. E)
Power Semiconductors
7
Rev. 2.6 Febr. 08