BUZ20 Datasheet, PDF (7/8 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ 20
Drain-source on-resistance
R_{DS (on)} = ^ƒ(T_j)
parameter: I_D = 8.5 A, V_GS = 10 V
0.65
Ω
0.55
R_{DS (on)0.50}
0.45
0.40
0.35
0.30
98%
0.25
typ
0.20
0.15
0.10
0.05
0.00
-60
-20
20
60
100 ˚C 160
T_j
Gate threshold voltage
V_{GS (th)} = ^ƒ(T_j)
parameter: V_GS = V_DS, I_D = 1 mA
4.6
V
4.0
V_{GS(th) 3.6}
3.2
98%
typ
2.8
2.4
2%
2.0
1.6
1.2
0.8
0.4
0.0
-60
-20
20
60
100 ˚C 160
T_j
Typ. capacitances
C = f (V_DS)
parameter:V_GS = 0V, f = 1MHz
10 ¹
Forward characteristics of reverse diode
I_F = ^ƒ(V_SD)
parameter: T_j, t_p = 80 µs
10 ²
nF
C
10 ⁰
A
I_F
10 ¹
C_iss
10 ^-1
C_oss
C_rss
10 ^-2
0
5 10 15 20 25 30 V 40
V_DS
Data Sheet
7
10 ⁰
T_j = 25 ˚C typ
T_j = 150 ˚C typ
T_j = 25 ˚C (98%)
T_j = 150 ˚C (98%)
10 ^-1
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
V_SD
05.99