BTS7970B Datasheet, PDF (7/28 Pages) Infineon Technologies AG – High Current PN Half Bridge NovalithIC 68 A, 7 mΩ + 9 mΩ typ.

High Current PN Half Bridge
BTS 7970B
Maximum Ratings
3
Maximum Ratings
-40 °C < T_j < 150 °C (unless otherwise specified)
Pos Parameter
Symbol Limits Unit
min max
Electrical Maximum Ratings
3.0.1 Supply voltage
3.0.2 Logic Input Voltage
3.0.3 HS/LS continuous drain
current
3.0.4 HS pulsed drain current
V_VS
V_IN
V_INH
I_D(HS)
I_D(LS)
I_D(HS)
-0.3 45 V
-0.3 5.3 V
-44 44¹⁾ A
-90 90¹⁾ A
3.0.5 LS pulsed drain current I_D(LS) -90 90¹⁾ A
Test Condition
T_C < 85°C
switch active
T_C < 85°C
t_pulse = 10ms
single pulse
3.0.6 PWM current
I_OUT1) -55 55 A
-60 60 A
3.0.7 Voltage at SR pin
V_SR
-0.3 1.0 V
3.0.8 Voltage between VS and V_VS -V_IS -0.3 45 V
IS pin
3.0.9 Voltage at IS pin
V_IS
Thermal Maximum Ratings
-20 45 V
3.0.10 Junction temperature T_j
3.0.11 Storage temperature
T_stg
-40 150 °C
-55 150 °C
ESD Susceptibility
3.0.12 ESD susceptibility
V_ESD
kV
f = 1kHz, DC = 50%
f = 20kHz, DC = 50%
HBM²⁾
IN, INH, SR, IS
OUT, GND, VS
-2 2
-6 6
1) _{Maximum reachable current may be smaller depending on current limitation level}
2) _{ESD susceptibility HBM according to EIA/JESD 22-A 114B}
Note: Maximum ratings are absolute ratings; exceeding any one of these values may
cause irreversible damage to the device. Exposure to maximum rating conditions
for extended periods of time may affect device reliability
Data Sheet
6
Rev. 2.0, 2006-05-09