BTS7960 Datasheet, PDF (7/28 Pages) Infineon Technologies AG – High Current PN Half Bridge NovalithIC 43 A, 7 mΩ + 9 mΩ

High Current PN Half Bridge
BTS 7960
Maximum Ratings
3
Maximum Ratings
-40 °C < T_j < 150 °C (unless otherwise specified)
Pos Parameter
Symbol Limits
Unit Test Condition
min max
Electrical Maximum Ratings
3.0.1 Supply voltage
V_VS
-0.3 45 V
3.0.2 Logic Input Voltage
3.0.3
3.0.4
3.0.5
HS/LS continuous drain
current
HS pulsed drain current
LS pulsed drain current
V_IN
V_INH
I_D(HS)
I_D(LS)
I_D(HS)
I_D(LS)
-0.3 5.3 V
-40 40¹⁾ A
-60 60¹⁾ A
-60 60¹⁾ A
3.0.6 Voltage at SR pin
V_SR
-0.3 1.0 V
3.0.7 Voltage between VS and V_VS -V_IS -0.3 45 V
IS pin
T_C < 85°C
switch active
T_C < 85°C
t_pulse = 10ms
3.0.8 Voltage at IS pin
V_IS
Thermal Maximum Ratings
-20 45 V
3.0.9 Junction temperature
T_j
3.0.10 Storage temperature
T_stg
-40 150 °C
-55 150 °C
ESD Susceptibility
3.0.11 ESD susceptibility HBM V_ESD
IN, INH, SR, IS
OUT, GND, VS
kV according to EIA/
JESD 22-A 114B
-2 2
-6 6
1) _{Maximum reachable current may be smaller depending on current limitation level}
Note: Maximum ratings are absolute ratings; exceeding any one of these values may
cause irreversible damage to the device. Exposure to maximum rating conditions
for extended periods of time may affect device reliability
Data Sheet
6
Rev. 1.1, 2004-12-07