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| BTS130 Datasheet, PDF (7/10 Pages) Siemens Semiconductor Group – TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic) | |||
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TEMPFET® BTS 130
Continuous drain current ID = f (TC)
Parameter: VGS ⥠10 V
Forward characteristics of reverse diode
IF = f (VSD)
Parameter: Tj, tp = 80 µs (spread)
Typ. gate-source leakage current
IGSS = f (TC)
Parameter: VGS = 20 V, VDS = 0
Typ. capacitances C = f (VDS)
Parameter: VGS = 0, f = 1 MHz
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04.97
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