BSZ215CH Datasheet, PDF (7/13 Pages) Infineon Technologies AG – OptiMOS™2 + OptiMOS™-P 2 Small Signal Transistor

9 Typ. output characteristics (P)
I _D=f(V _DS); T _j=25 °C
parameter: V _GS
20
10 V
18
4.5 V
16
3.3 V
14
10 Typ. output characteristics (N)
I _D=f(V _DS); T _j=25 °C
parameter: V _GS
20
10 V ^{4.5 V}
18
3.5 V
16
BSZ215C H
3V
14
12
3V
12
10
8
6
4
2
0
0
2.5 V
2.3 V
2V
1.8 V
1
2
3
V_DS [V]
10
8
6
4
2
0
0
2.5 V
2.3 V
1
2
VDS [V]
2V
1.8 V
3
11 Typ. drain-source on resistance (P)
R _DS(on)=f(I _D); T _j=25 °C
parameter: V _GS
280
12 Typ. drain-source on resistance (N)
R _DS(on)=f(I _D); T _j=25 °C
parameter: V _GS
120
240
200
2V
160
120
80
40
2.2 V
2.5 V
3V
3.3 V
4.5 V
6V
100
2.2 V
80
2.5 V
60
40
20
3V
3.5 V
4.5 V
6V
0
0
Rev 2.0
2
4
6
I_D [A]
0
8
0
page 7
2
4
6
8
I_D [A]
2015-07-15