BSS89 Datasheet, PDF (7/7 Pages) NXP Semiconductors – N-channel enhancement mode vertical D-MOS transistor

BSS 89
Drain-source on-resistance
R_{DS (on)} = ƒ(T_j)
parameter: I_D = 0.3 A, V_GS = 10 V
Gate threshold voltage
V_{GS (th)} = ƒ(T_j)
parameter: V_GS = V_DS, I_D = 1 mA
15
4.6
Ω
V
13
4.0
R
12
DS (on)
11
10
V
GS(th)
3.6
3.2
9
2.8
8
98%
7
6
typ
5
2.4
98%
2.0
typ
1.6
4
3
2
1
0
-60
-20
20
60
100 ˚C 160
T_j
1.2
2%
0.8
0.4
0.0
-60
-20
20
60
100 ˚C 160
T_j
Typ. capacitances
C = f (V_DS)
parameter:V_GS=0V, f = 1 MHz
10 ³
Forward characteristics of reverse diode
I_F = ƒ(V_SD)
parameter: T_j, t_p = 80 µs
10 ¹
pF
C
10 ²
A
I_F
C_iss
10 ⁰
10 ¹
C_oss
C
rss
10 ⁰
0
5 10 15 20 25 30 V 40
V
DS
Data Sheet
7
10 ^-1
T_j = 25 ˚C typ
T_j = 150 ˚C typ
T_j = 25 ˚C (98%)
T_j = 150 ˚C (98%)
10 ^-2
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
V_SD
05.99