BSO200N03 Datasheet, PDF (7/9 Pages) Infineon Technologies AG – OptiMOS®2 Power-Transistor

13 Avalanche characteristics
I _AS=f(t _AV); R _GS=25 Ω
parameter: T _j(start)
10
125 °C
100 °C
25 °C
14 Typ. gate charge
V _GS=f(Q _gate); I _D=3.9 A pulsed
parameter: V _DD
12
10
8
BSO200N03
15 V
6V
24 V
1
6
4
2
0.1
1
10
100
t _AV [µs]
0
1000
0
4
8
12
Q _gate [nC]
15 Drain-source breakdown voltage
V _BR(DSS)=f(T _j); I _D=1 mA
16 Gate charge waveforms
Rev. 1.2
38
V _GS
36
34
32
30
28
V _{g s(th)}
26
24
22
20
-60
-20
20
60 100 140 180
T _j [°C]
Q _g(th)
Q _gs
page 7
Q_g
Q _sw
Q _gd
Q _gate
2006-05-09