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BSC093N04LSG_13 Datasheet, PDF (7/10 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor
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13 Avalanche characteristics
I AS=f(t AV); R GS=25 W
parameter: T j(start)
100
25 °C
100 °C
10
125 °C
14 Typ. gate charge
V GS=f(Q gate); I D=30 A pulsed
parameter: V DD
12
BSC093N04LS G
20 V
10
8V
32 V
8
6
4
2
1
0.1
1
10
100
tAV [µs]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=1 mA
1000
0
0
4
8
12
16
20
Qgate [nC]
16 Gate charge waveforms
45
V GS
Qg
40
35
30
V gs(th)
25
20
-60 -20
20
60 100 140 180
Tj [°C]
Q g(th)
Q gs
Rev. 2.1
page 7
Q sw
Q gd
Q gate
2013-05-21
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