BSC018N04LSG Datasheet, PDF (7/10 Pages) Infineon Technologies AG – OptiMOS3 Power-Transistor

13 Avalanche characteristics
I _AS=f(t _AV); R _GS=25 Ω
parameter: T _j(start)
100
125 °C
100 °C
25 °C
10
14 Typ. gate charge
V _GS=f(Q _gate); I _D=30 A pulsed
parameter: V _DD
12
BSC018N04LS G
20 V
10
8V
32 V
8
6
4
2
1
0
1
10
100
1000
0
40
80
120
t _AV [µs]
Q _gate [nC]
15 Drain-source breakdown voltage
V _BR(DSS)=f(T _j); I _D=1 mA
16 Gate charge waveforms
45
V _GS
Q_g
40
35
30
V _{g s(th)}
25
Q _g(th)
20
-60
-20
20
60 100 140 180
T _j [°C]
Q _gs
Rev. 1.4
page 7
Q _sw
Q _gd
Q _gate
2009-10-22