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BSB044N08NN3G Datasheet, PDF (7/13 Pages) Infineon Technologies AG – n-Channel Power MOSFET
Table 10
5 Typ. output characteristics TC=25 °C
OptiMOS™ Power-MOSFET
BSB044N08NN3 G
Electrical characteristics diagrams
6 Typ. drain-source on-state resistance
ID=f(VDS); Tj=25 °C; parameter: VGS
Table 11
7 Typ. transfer characteristics
RDS(on)=f(ID); Tj=25 °C; parameter: VGS
8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max
Preliminary Data Sheet
gfs=f(ID); Tj=25 °C
6
1.2, 2011-03-07