BSA223SP Datasheet, PDF (7/8 Pages) Infineon Technologies AG – OptiMOS-P Small-Signal-Transistor

13 Typ. avalanche energy
E_AS = f (T_j), par.: I_D = -0.39 A
V_DD = -10 V, R_GS = 25 Ω
1.4
mJ
Preliminary data
BSA 223SP
14 Typ. gate charge
V_GS = f (Q_Gate)
parameter: I_D = -0.39 A pulsed, T_j = 25 °C
BSA 223SP
-16
V
1
0.8
0.6
0.4
0.2
0
20 40 60 80 100 120 °C 160
T_j
15 Drain-source breakdown voltage
V_(BR)DSS = f (T_j)
-12
-10
-8
20%
-6 ^50%
80%
-4
-2
0
0
0.2 0.4 0.6 0.8
1 ^nC 1.3
|Q_Gate |
-24.5 ^{BSA 223SP}
V
-23.5
-23
-22.5
-22
-21.5
-21
-20.5
-20
-19.5
-19
-18.5
-18
-60 -20
20
60
100 °C
180
T_j
Page 7
2002-08-26