BGS14AN16 Datasheet, PDF (7/15 Pages) Infineon Technologies AG – RF SP4T Switch

Confidential
BGS14AN16 RF SP4T Switch
1 Features
• 4 high-linearity Rx paths with power handling capability of up
to 30 dBm
• All Ports fully symmetrical
• No external decoupling components required
• High ESD robustness
• Low harmonic generation
• Low insertion loss
• High port-to-port-isolation
• 0.1 to 3 GHz coverage
• Direct connect to battery
• Power down mode
• On-chip control logic supporting logic levels from 1.5 V to V_dd
• Lead and halogen free package (RoHS and WEEE compliant)
• Small leadless package TSNP-16-6 with a size of 2.3 x 2.3
mm² and a maximum height of 0.77 mm.
BGS14AN16
Applications
• CDMA/WCDMA Diversity
• Analog and Digital Tuner
• Band Switching
• LTE
2 Product Description
The BGS14AN16 RF MOS switch is specifically designed for WCDMA diversity applications. Any of the 4 ports can
be used as termination of the diversity antenna handling up to 30 dBm.
This SP4T offers low insertion loss and high robustness against interferer signals at the antenna port and low har-
monic generation in termination mode.
An integrated LDO allows to connect V_dd directly to battery, hence no regulated supply voltage is required. A power
down mode is implemented to avoid current drain when the device is not in use.
The on-chip controller integrates CMOS logic and level shifters, driven by control inputs from 1.5 V to V_dd . Unlike
GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally.
The BGS14AN16 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of
GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness.
The device has a very small size of only 2.3 x 2.3 mm² and a maximum height of 0.77 mm.
Table 1: Ordering Information
Product Name
Product Type
BGS14AN16
SP4T RF Switch
Package
PG-TSNP-16-6
Marking
14A
Data Sheet
7
Revision 1.0 - December 17, 2012