BG3430R Datasheet, PDF (7/11 Pages) Infineon Technologies AG – DUAL N-Channel MOSFET Tetrode

BG3430R
Gate 1 forward transconductance
g_fs = ƒ(I_D), V_DS = 5V, V_G2S = Parameter
amp. A = amp. B
40
mS
4V
3.5V
30
3V
25
2.5V
20
15
2V
10
5
0
0 4 8 12 16 20 24 28 32 mA 40
I_D
Drain current I_D = ƒ(V_G1S)
V_DS = 5V, V_G2S = Parameter
amp. A = amp. B
30
mA
4V
3V
24
2.5V
22
20
2V
18
16
14
12
10
1.5V
8
6
4
2
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 V 1.8
V_g1
Drain current I_D = ƒ(V_GG) amp.A
V_DS = 5V, V_G2S = 4V, R_G1 = 100kΩ
(connected to V_GG, V_GG=gate1 supply voltage)
14
mA
10
8
6
4
2
0
0
1
2
3
V
5
V_d
Drain current I_D = ƒ(V_GG)
V_G2S = 4V, R_G1 = Parameter in kΩ
amp. A
22
mA
80K
18
100K
16
120K
14
150K
12
10
8
6
4
2
0
0
1
2
3
4
5V
7
V_d
7
2009-10-01