English
Language : 

BFT92 Datasheet, PDF (7/7 Pages) NXP Semiconductors – PNP 5 GHz wideband transistor
BFT92
Power Gain Gma, Gms = f(VCE):_____
|S21|2 = f(VCE):---------
f = Parameter
16
IC=15mA
dB
0.9GHz
0.9GHz
12
10
1.8GHz
8
1.8GHz
6
4
2
0
0
2
4
6
8
V
12
VCE
Power Gain Gma, Gms = f(f)
Intermodulation Intercept Point IP3=f(IC)
 (3rd order, Output, ZS=ZL=50 )
VCE = Parameter, f = 900MHz
28
8V
dBm
24
3V
22
2V
20
18
1V
16
14
12
10
8
6
4
0
4
8 12 16 20 mA 28
IC
Power Gain |S21|2= f(f)
VCE = Parameter
30
IC=15mA
dB
20
15
10
10V
5
2V
1V
0.7
0
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
VCE = Parameter
26
dB IC=15mA
22
20
18
16
14
12
10
8
6
4
10V
2
0
0.7V
2V
-2
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
7
Jul-16-2001