BFR193T Datasheet, PDF (7/7 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

BFR193T
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
20
dB ^IC=30mA
0.9GHz
16
0.9GHz
14
12
1.8GHz
10
1.8GHz
8
6
4
2
00 _{1 2 3 4 5 6 7 V 9}
V_CE
Power Gain G_ma, G_ms = f(f)
Intermodulation Intercept Point IP₃=f(I_C)

(3rd order, Output, Z_S=Z_L=50 )
V_CE = Parameter, f = 900MHz
35
dBm
8V
5V
3V
25
2V
20
15
1V
100
10
20
30
40 ^mA
60
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
45
I_C=30mA
dB
35
30
25
20
15
10
8V
5
5V
1V
00
1
2
3
4
5 ^GHz 7
f
V_CE = Parameter
36
I_C=30mA
dBm
24
18
12
6
8V
0
5V
1V
-60
1
2
3
4
5 ^GHz 7
f
7
Aug-09-2001