BFR181 Datasheet, PDF (7/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)

BFR181
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
20
I_C=5mA
dB
0.9GHz
16
0.9GHz
14
12
1.8GHz
10
1.8GHz
8
6
0
2
4
6
8
Power Gain G_ma, G_ms = f(f)
V
12
V_CE
Intermodulation Intercept Point IP₃=f(I_C)

(3rd order, Output, Z_S=Z_L=50 )
V_CE = Parameter, f = 900MHz
24
dBm
8V
20
18
5V
16
3V
14
12
2V
10
8
1V
6
4
2
0
-2
0 2 4 6 8 10 12 14 16 V 20
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
30
dB ^IC^=5mA
26
24
22
20
18
16
14
12
10
8
10V
1V
6
0.7V
4
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
V_CE = Parameter
25
I_C=5mA
dB
15
10
10V
5
1V
0.7V
0
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
7
Jul-30-2001