BFP640E6327 Datasheet, PDF (7/10 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

Power gain G_ma, G_ms = ƒ (V_CE)
I_C = 30mA
f = parameter
30
0.9GHz
dB
1.8GHz
20
2.4GHz
3GHz
15
4GHz
5GHz
6GHz
10
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5
V_CE
Noise figure F = ƒ(I_C)
V_CE = 3V, f = 1.8 GHz
Noise figure F = ƒ(I_C)
V_CE = 3V, Z_S = Z_Sopt
BFP640
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
10
20
30
I [mA]
c
Noise figure F = ƒ(f)
V_CE = 3V, Z_S = Z_Sopt
f = 6GHz
f = 5GHz
f = 4GHz
f = 3GHz
f = 2.4GHz
f = 1.8GHz
f = 0.9GHz
40
50
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Z = 50Ω
S
Z =Z
S
Sopt
10
20
30
40
50
I [mA]
c
2
1.8
1.6
1.4
1.2
1
0.8
I = 30mA
C
0.6
I = 5.0mA
C
0.4
0.2
0
0
1
2
3
4
5
6
7
f [GHz]
2007-05-29
7