BFP540ESD_09 Datasheet, PDF (7/10 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

Power gain G_ma, G_ms = ƒ (V_CE)
I_C = 20 mA
f = parameter in GHz
28
0.90GHz
26
24
22
1.80GHz
20
2.40GHz
18
16
3.00GHz
14
4.00GHz
12
5.00GHz
10
6.00GHz
8
6
0
1
2
3
4
5
6
V [V]
CE
Noise figure F = ƒ(I_C)
V_CE = 3V, f = 1.8 GHz
BFP540ESD
Noise figure F = ƒ(I_C)
V_CE = 3 V, f = parameter in GHz
Z_S = Z_Sopt
5
4.5
4
3.5
3
2.5
2
1.5
f = 6GHz
f = 5GHz
1
f = 4GHz
f = 3GHz
f = 1.8GHz
0.5
f = 0.9GHz
0
0
10
20
30
40
50
60
70
80
I [mA]
c
Noise figure F = ƒ(f)
V_CE = 3 V, Z_S = Z_Sopt
4.5
4
3.5
3
2.5
2
1.5
1
Z = 50Ω
S
Z =Z
0.5
S
Sopt
0
0
10
20
30
40
50
60
70
80
I [mA]
c
2
1.8
1.6
1.4
1.2
1
I = 20mA
0.8
C
I = 5.0mA
C
0.6
0.4
0
1
2
3
4
5
6
7
f [GHz]
2009-12-04
7